AON6444 60v n-channel mosfet sdmos tm general description product summary v ds 60v i d (at v gs =10v) 81a r ds(on) (at v gs =10v) < 6.5m w r ds(on) (at v gs = 4.5v) < 8m w 100% uis tested 100% r g tested symbol v ds v gs i dm i ar e ar t j , t stg symbol t 10s steady-state steady-state r q jc maximum junction-to-case c/w c/w maximum junction-to-ambient a d 1 55 1.5 power dissipation b p d w power dissipation a p dsm w t a =70c 83 1.4 t a =25c a t a =25c i dsm a t a =70c i d 81 51 t c =25c t c =100c repetitive avalanche energy l=0.1mh c mj avalanche current c 11 continuous drain current 168 14 a 58 the AON6444 is fabricated with sdmos tm trench technology that combines excellent r ds(on) with low gate charge.the result is outstanding efficiency with co ntrolled switching behavior. this universal technology is we ll suited for pwm, load switching and general purpose applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted v 20 gate-source voltage drain-source voltage 60 units maximum junction-to-ambient a c/w r q ja 14 40 17 junction and storage temperature range -55 to 150 c thermal characteristics 170 pulsed drain current c continuous drain current parameter typ max t c =25c 2.3 33 t c =100c g ds top view 1 2 3 4 8 7 6 5 pin1 dfn5x6 top view bottom view rev 1: november 2010 www.aosmd.com page 1 of 7
AON6444 symbol min typ max units bv dss 60 v v ds =60v, v gs =0v 100 t j =55c 500 i gss 100 na v gs(th) gate threshold voltage 1.5 2 2.5 v i d(on) 170 a 5.4 6.5 t j =125c 9.6 11.5 6.4 8 m w g fs 75 s v sd 0.7 1 v i s 81 a c iss 3800 4800 5800 pf c oss 330 470 610 pf c rss 110 190 270 pf r g 0.5 1 1.5 w q g (10v) 64 80 96 nc q g (4.5v) 32 40 48 nc q gs 12 15 18 nc q gd 8 14 20 nc t d(on) 13.5 ns t r 4.2 ns t d(off) 51 ns t f 7 ns t rr 14 18 22 ns q rr 43 54 65 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance i f =20a, di/dt=500a/ m s v gs =0v, v ds =30v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a v ds =v gs i d =250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m w i s =1a,v gs =0v v ds =5v, i d =20a v gs =4.5v, i d =20a v gs =10v, v ds =30v, r l =1.5 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =30v, i d =20a gate source charge gate drain charge total gate charge rev 1: nov. 2010 body diode reverse recovery charge i f =20a, di/dt=500a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 15 0c. the value in any given application depends on the user's specific board design, and the maximu m temperature of 150c may be used if the pcb allow s it. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse ratin g. g. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. rev 1: november 2010 www.aosmd.com page 2 of 7
AON6444 typical electrical and thermal characteristics 17 52 10 0 18 40 0 30 60 90 120 150 0 1 2 3 4 5 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 4 5 6 7 8 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =4.5v i d =20a v gs =10v i d =20a 3 5 7 9 11 13 15 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c 0 30 60 90 120 150 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =3v 3.5v 7v 10v 4.5v 4v 5v rev 1: november 2010 www.aosmd.com page 3 of 7
AON6444 typical electrical and thermal characteristics 17 52 10 0 18 40 0 2 4 6 8 10 0 20 40 60 80 100 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 1000 2000 3000 4000 5000 6000 7000 0 10 20 30 40 50 60 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 240 280 320 360 400 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q qq q jc normalized transient thermal resistance c oss c rss v ds =30v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t c =25c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 m s r q jc =1.5c/w rev 1: november 2010 www.aosmd.com page 4 of 7
AON6444 typical electrical and thermal characteristics 81a 17 52 10 0 18 40 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal imp edance (note g) z q qq q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 30 60 90 120 150 0.000001 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 12: single pulse avalanche capability (note c) i ar (a) peak avalanche current 0 10 20 30 40 50 60 70 80 90 0 25 50 75 100 125 150 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 20 40 60 80 100 0 25 50 75 100 125 150 t case (c) figure 14: current de-rating (note f) current rating i d (a) t a =25c 1 10 100 1000 10000 0.0001 0.01 1 100 10000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note g) power (w) t a =25c t a =150c t a =100c t a =125c r q ja =55c/w rev 1: november 2010 www.aosmd.com page 5 of 7
AON6444 typical electrical and thermal characteristics 81a 0 20 40 60 80 100 0 5 10 15 20 25 30 i s (a) figure 17: diode reverse recovery charge and peak current vs. conduction current q rr (nc) 0 5 10 15 20 25 i rm (a) di/dt=800a/ m s 125oc 125oc 25oc 25oc q rr i rm 0 20 40 60 80 100 0 200 400 600 800 1000 di/dt (a/ m mm m s) figure 19: diode reverse recovery charge and peak current vs. di/dt q rr (nc) 0 5 10 15 20 25 i rm (a) 125oc 125oc 25oc 25oc i s =20a q rr i rm 0 3 6 9 12 15 18 21 0 5 10 15 20 25 30 i s (a) figure 18: diode reverse recovery time and softness factor vs. conduction current t rr (ns) 0 0.4 0.8 1.2 1.6 2 s di/dt=800a/ m s 125oc 125oc 25oc 25oc t rr s 0 5 10 15 20 25 30 0 200 400 600 800 1000 di/dt (a/ m mm m s) figure 20: diode reverse recovery time and softness factor vs. di/dt t rr (ns) 0 0.5 1 1.5 2 2.5 s 125oc 25oc 25oc 125o i s =20a t rr s rev 1: november 2010 www.aosmd.com page 6 of 7
AON6444 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 1: november 2010 www.aosmd.com page 7 of 7
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